| PART |
Description |
Maker |
| CJ3439KDW |
SOT-363 Plastic-Encapsulate MOSFETS
|
ZP Semiconductor
|
| BC846BPN |
SOT-363 Plastic-Encapsulate Biploar Transistors
|
Micro Commercial Components
|
| AT32063 AT-32063-BLK AT-32063-TR1 |
AT-32063
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dANPNgWX^ cCE^CvSOT-363pbP[W
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| CMKTVS5-4 PB-CMKTVS5-1509 |
Low Capacitance, Quad TVS/Diode Array in SOT-363 package
|
Central Semiconductor Corp
Central Semiconductor C...
|
| DDC123JU-7 DDC114EU DDC114EU-7 DDC114TU DDC114YU-7 |
Prebiased Transistors
NPN PRE-BIASED SMALL SIGNAL SOT-363 DUAL SURFACE MOUNT TRANSISTOR
|
DIODES[Diodes Incorporated]
|
| K4D263238E K4D263238E-GC25 K4D263238E-GC2A K4D2632 |
1M x 32Bit x 4 Banks Graphic Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
DIODE ZENER SINGLE 300mW 15.2Vz 10mA-Izt 0.02535 0.05uA-Ir 12 SOT-23 3K/REEL
DIODE ZENER TRIPLE ISOLATED 200mW 15.2Vz 10mA-Izt 0.02535 0.05uA-Ir 12 SOT-363 3K/REEL
DIODE ZENER TRIPLE ISOLATED 200mW 17.88Vz 10mA-Izt 0.02545 0.05uA-Ir 14 SOT-363 3K/REEL 100万x 32Bit的4银行图形双数据速率同步DRAM的双向数据选通和DLL
DIODE ZENER SINGLE 300mW 17.9Vz 10mA-Izt 0.02545 0.05uA-Ir 14 SOT-23 3K/REEL 100万x 32Bit的4银行图形双数据速率同步DRAM的双向数据选通和DLL
DIODE ZENER SINGLE 300mW 16.1Vz 10mA-Izt 0.02547 0.05uA-Ir 12 SOT-23 3K/REEL 100万x 32Bit的4银行图形双数据速率同步DRAM的双向数据选通和DLL
DIODE ZENER TRIPLE ISOLATED 200mW 16.1Vz 10mA-Izt 0.02547 0.05uA-Ir 12 SOT-363 3K/REEL 100万x 32Bit的4银行图形双数据速率同步DRAM的双向数据选通和DLL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| BSV236SP |
OptiMOS -P Small-Signal-Transistor 的OptiMOS磷小信号晶体
Low Voltage MOSFETs - OptiMOS MOSFET, -20V, SOT-363
|
Infineon Technologies AG
|
| AN8839 AN8839NSB |
DIODE ZENER TRIPLE ISOLATED 200mW 20Vz 6.2mA-Izt 0.05 0.1uA-Ir 15 SOT-363 3K/REEL
CD-DA head amplifier IC for 3-beam system optical pick-up
|
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
